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dc.contributor.author
Bufler, F. M.
dc.contributor.author
Gautschi, R.
dc.contributor.author
Erlebach, A.
dc.date.accessioned
2017-06-08T21:30:45Z
dc.date.available
2017-06-08T21:30:45Z
dc.date.issued
2008
dc.identifier.issn
0741-3106
dc.identifier.issn
1558-0563
dc.identifier.other
10.1109/LED.2008.917633
dc.identifier.uri
http://hdl.handle.net/20.500.11850/14822
dc.language.iso
en
dc.publisher
IEEE
dc.subject
enhanced mobility
dc.subject
Monte Carlo (MC) device simulation
dc.subject
PMOS
dc.subject
stress engineering
dc.subject
(110)-surface
dc.title
Monte Carlo Stress Engineering of Scaled (110) and (100) Bulk pMOSFETs
dc.type
Journal Article
ethz.journal.title
IEEE Electron Device Letters
ethz.journal.volume
29
ethz.journal.issue
4
ethz.journal.abbreviated
IEEE Electron Device Lett.
ethz.pages.start
369
ethz.pages.end
371
ethz.identifier.wos
ethz.identifier.nebis
000008013
ethz.publication.place
New York
ethz.publication.status
published
ethz.leitzahl
03228 - Fichtner, Wolfgang
ethz.leitzahl.certified
03228 - Fichtner, Wolfgang
ethz.date.deposited
2017-06-08T21:30:56Z
ethz.source
ECIT
ethz.identifier.importid
imp59364c46363a843821
ethz.ecitpid
pub:26512
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-26T05:03:29Z
ethz.rosetta.lastUpdated
2021-02-14T05:41:15Z
ethz.rosetta.versionExported
true
ethz.COinS
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