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dc.contributor.author
Belousov, Andrey
dc.contributor.supervisor
Batlogg, Bertram
dc.contributor.supervisor
Karpinski, Janusz
dc.date.accessioned
2017-06-13T10:42:27Z
dc.date.available
2017-06-13T10:42:27Z
dc.date.issued
2010
dc.identifier.uri
http://hdl.handle.net/20.500.11850/151902
dc.identifier.doi
10.3929/ethz-a-006039449
dc.language.iso
en
dc.publisher
ETH
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
HALBLEITERMATERIALIEN (ELEKTROTECHNIK)
dc.subject
ALUMINIUM-STICKSTOFF-VERBINDUNGEN (ANORGANISCHE CHEMIE)
dc.subject
KRISTALLZÜCHTUNG + KRISTALLWACHSTUM
dc.subject
MIKROSTRUKTUR VON MOLEKULARSYSTEMEN (PHYSIK)
dc.subject
SEMICONDUCTOR MATERIALS (ELECTRICAL ENGINEERING)
dc.subject
ALUMINIUM-NITROGEN COMPOUNDS (INORGANIC CHEMISTRY)
dc.subject
CRYSTALL GROWING + CRYSTAL GROWTH
dc.subject
MICROSTRUCTURE OF MOLECULAR SYSTEMS (PHYSICS)
dc.title
High pressure crystal growth, thermodynamics and physical properties of AIxGa₁-xN semiconductors
dc.type
Doctoral Thesis
dc.rights.license
In Copyright - Non-Commercial Use Permitted
ethz.size
100 S.
ethz.code.ddc
6 - Technology, medicine and applied sciences::621.3 - Electric engineering
ethz.code.ddc
5 - Science::530 - Physics
ethz.notes
Diss., Eidgenössische Technische Hochschule ETH Zürich, Nr. 18846, 2010.
ethz.identifier.diss
18846
ethz.identifier.nebis
006039449
ethz.publication.place
Zürich
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.date.deposited
2017-06-13T10:45:31Z
ethz.source
ECOL
ethz.identifier.importid
imp59366ae9c41c797114
ethz.ecolpid
eth:1137
ethz.eth
yes
ethz.availability
Open access
ethz.rosetta.installDate
2017-07-25T12:18:05Z
ethz.rosetta.lastUpdated
2018-11-04T20:38:49Z
ethz.rosetta.versionExported
true
ethz.COinS
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