Modeling, growth and characterization of InGaAs/AIAsSb quantum well structures for all-optical switching based on intersubband transitions

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Author
Fedoryshyn, Yuriy
Date
2012
Type
    Doctoral Thesis
Rights / license
In Copyright - Non-Commercial Use Permitted
Permanent link
https://doi.org/10.3929/ethz-a-007146701
Publication status
published
External links
Search print copy at ETH Library
Contributors
Examiner: Faist, Jérômecc
Examiner: Jäckel, Heinz
Publisher
ETH
Subject
OPTOELEKTRONISCHE BAUELEMENTE + PHOTOELEKTRONISCHE BAUELEMENTE (OPTOELEKTRONIK); ZWEIDIMENSIONALE, QUASI-ZWEIDIMENSIONALE STRUKTUR (PHYSIK DER KONDENSIERTEN MATERIE); OPTISCHE SCHALTER + WELLENLEITERSCHALTER (ELEKTRISCHE SCHWINGUNGSTECHNIK); OPTOELECTRONIC DEVICES + PHOTOELECTRONIC DEVICES (OPTOELECTRONICS); TWO-DIMENSIONAL, QUASI TWO-DIMENSIONAL STRUCTURE (CONDENSED MATTER PHYSICS); OPTICAL SWITCHES + WAVEGUIDE SWITCHES (ELECTRICAL OSCILLATION TECHNOLOGY)
Organisational unit
02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.
03386 - Jäckel, Heinz
Notes
Diss., Eidgenössische Technische Hochschule ETH Zürich, Nr. 20223, 2012.
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