Passivation of Ge for high mobility CMOS transistors

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Author
Andersson, Caroline
Date
2012
Type
    Doctoral Thesis
Rights / license
In Copyright - Non-Commercial Use Permitted
Permanent link
https://doi.org/10.3929/ethz-a-007332862
Publication status
published
External links
Search print copy at ETH Library
Contributors
Examiner: Batlogg, Bertram
Examiner: Fompeyrine, Jean
Publisher
ETH
Subject
GERMANIUM (CHEMISCHE ELEMENTE); TRANSISTOREN/TEGFET, VFET, MODFET, MOSFET, MESFET, SGFET, ISFET, MISFET, HFET, JFET, CIGFET, POSFET (ELEKTRONIK); KOMPLEMENTÄRE METALLOXID-HALBLEITERSCHALTUNGEN, CMOS (MIKROELEKTRONIK); GERMANIUM (CHEMICAL ELEMENTS); TRANSISTORS/TEGFET, VFET, MODFET, MOSFET, MESFET, SGFET, ISFET, MISFET, HFET, JFET, CIGFET, POSFET (ELECTRONICS); COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR CIRCUITS, CMOS (MICROELECTRONICS)
Organisational unit
02010 - Dep. Physik / Dep. of Physics
03569 - Batlogg, Bertram (emeritus)
Notes
Diss., Eidgenössische Technische Hochschule ETH Zürich, Nr. 20216, 2012.
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