Molecular beam epitaxial growth of high-quality Sb-based III/V semiconductor heterostructures
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Author
Date
2014Type
- Doctoral Thesis
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https://doi.org/10.3929/ethz-a-010384191Publication status
publishedExternal links
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Publisher
ETH-ZürichSubject
HALBLEITERMATERIALIEN (ELEKTROTECHNIK); HETEROKONTAKT + HETEROSTRUKTUR (KRISTALLOGRAPHIE); MOLEKULARSTRAHLEPITAXIE (PHYSIK VON MOLEKULARSYSTEMEN); ANTIMONVERBINDUNGEN (ANORGANISCHE CHEMIE); SEMICONDUCTOR MATERIALS (ELECTRICAL ENGINEERING); HETEROJUNCTION + HETEROSTRUCTURE (CRYSTALLOGRAPHY); MOLECULAR BEAM EPITAXY, MBE (PHYSICS OF MOLECULAR SYSTEMS); ANTIMONY COMPOUNDS (INORGANIC CHEMISTRY)Organisational unit
02010 - Dep. Physik / Dep. of Physics03833 - Wegscheider, Werner / Wegscheider, Werner
Notes
Diss., Eidgenössische Technische Hochschule ETH Zürich, Nr. 21998.More
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ETH Bibliography
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