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dc.contributor.author
Carrillo-Nuñez, Hamilton
dc.contributor.author
Stieger, Christian
dc.contributor.author
Luisier, Mathieu
dc.contributor.author
Schenk, Andreas
dc.date.accessioned
2017-09-26T08:10:06Z
dc.date.available
2017-06-14T07:43:40Z
dc.date.available
2017-09-26T08:08:31Z
dc.date.available
2017-09-26T08:10:06Z
dc.date.issued
2016
dc.identifier.uri
http://hdl.handle.net/20.500.11850/156128
dc.identifier.doi
10.3929/ethz-a-010810577
dc.language.iso
en
en_US
dc.publisher
ETH-Zürich
en_US
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
FELDEFFEKTTRANSISTOREN, FET (ELEKTRONIK)
en_US
dc.subject
FIELD EFFECT TRANSISTORS, FET (ELECTRONICS)
en_US
dc.title
Performance predictions of single-layer In-V double-gate n- and p-type field-effect transistors
en_US
dc.type
Conference Paper
dc.rights.license
In Copyright - Non-Commercial Use Permitted
dc.date.published
2017
ethz.size
1 Online-Ressource
en_US
ethz.code.ddc
6 - Technology, medicine and applied sciences::621.3 - Electric engineering
en_US
ethz.event
2016 IEEE International Electron Devices Meeting (IEDM)
en_US
ethz.event.location
San Francisco, CA, USA
en_US
ethz.event.date
December 3-7, 2016
en_US
ethz.identifier.nebis
010810577
ethz.publication.place
Zürich
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory
en_US
ethz.date.deposited
2017-06-14T07:52:28Z
ethz.source
ECOL
ethz.identifier.importid
imp59366ba6f2bc825389
ethz.ecolpid
eth:50288
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-25T16:00:59Z
ethz.rosetta.lastUpdated
2017-09-26T08:10:11Z
ethz.rosetta.versionExported
true
ethz.COinS
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