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dc.contributor.author
Oliveira, E.L. de
dc.contributor.author
Albuquerque, E.L.
dc.contributor.author
Sousa, J.S. de
dc.contributor.author
Farias, G.A.
dc.date.accessioned
2017-06-14T11:33:26Z
dc.date.available
2017-06-14T11:33:26Z
dc.date.issued
2009-03
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.3081629
dc.identifier.uri
http://hdl.handle.net/20.500.11850/157000
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.subject
ab initio calculations
dc.subject
boron
dc.subject
conduction bands
dc.subject
elemental semiconductors
dc.subject
impurities
dc.subject
nanostructured materials
dc.subject
phosphorus
dc.subject
radiative lifetimes
dc.subject
silicon
dc.subject
valence bands
dc.title
Radiative transitions in P- and B-doped silicon nanocrystals
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
94
ethz.journal.issue
10
ethz.journal.abbreviated
Appl. phys. lett.
ethz.pages.start
103114
ethz.size
3 p.
ethz.notes
Received 30 October 2008, Accepted 22 January 2009, Published online 12 March 2009.
ethz.identifier.wos
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.date.deposited
2017-06-14T11:41:35Z
ethz.source
ECIT
ethz.identifier.importid
imp59364cdf0778494407
ethz.ecitpid
pub:35270
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-14T18:24:02Z
ethz.rosetta.lastUpdated
2018-11-05T10:24:21Z
ethz.rosetta.versionExported
true
ethz.COinS
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