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dc.contributor.author
Bufler, F.M.
dc.contributor.author
Erlebach, A.
dc.contributor.author
Oulmane, M.
dc.date.accessioned
2017-06-14T14:23:20Z
dc.date.available
2017-06-14T14:23:20Z
dc.date.issued
2010
dc.identifier.isbn
978-1-4244-7699-2
dc.identifier.issn
1946-1569
dc.identifier.other
10.1109/SISPAD.2010.5604508
dc.identifier.uri
http://hdl.handle.net/20.500.11850/158206
dc.language.iso
en
dc.publisher
IEEE
dc.title
Symmetry Reduction by Surface Scattering and Mobility Model for Stressed < 100 >/(001) MOSFETs
dc.type
Conference Paper
ethz.book.title
SISPAD 2010 – 15th International conference on simulation of semiconductor processes and devices: proceedings
ethz.journal.title
International Conference on Simulation of Semiconductor Processes and Devices: proceedings
ethz.pages.start
275
ethz.pages.end
278
ethz.event
15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010)
ethz.event.location
Bologna, Italy
ethz.event.date
September 6-8, 2010
ethz.notes
.
ethz.identifier.wos
ethz.publication.place
Piscataway, NJ
ethz.publication.status
published
ethz.leitzahl
03228 - Fichtner, Wolfgang
ethz.leitzahl.certified
03228 - Fichtner, Wolfgang
ethz.date.deposited
2017-06-14T14:31:11Z
ethz.source
ECIT
ethz.identifier.importid
imp59364d44b7b2045324
ethz.ecitpid
pub:42059
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-19T12:45:31Z
ethz.rosetta.lastUpdated
2017-07-19T12:45:31Z
ethz.rosetta.versionExported
true
ethz.COinS
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