Symmetry of residual stress fields of ZnO below an indent measured by three-dimensional Raman spectroscopy
- Journal Article
Journal / seriesJournal of Applied Physics
Pages / Article No.
PublisherAmerican Institute of Physics
Subjectcathodoluminescence; crystal microstructure; crystal symmetry; dislocation density; II-VI semiconductors; internal stresses; plastic deformation; Raman spectra; transmission electron microscopy; Vickers hardness; wide band gap semiconductors; zinc compounds
NotesReceived 8 May 2009, Accepted 12 August 2009, Published online 21 September 2009.
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