Symmetry of residual stress fields of ZnO below an indent measured by three-dimensional Raman spectroscopy
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Date
2009Type
- Journal Article
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
Journal of Applied PhysicsVolume
Pages / Article No.
Publisher
American Institute of PhysicsSubject
cathodoluminescence; crystal microstructure; crystal symmetry; dislocation density; II-VI semiconductors; internal stresses; plastic deformation; Raman spectra; transmission electron microscopy; Vickers hardness; wide band gap semiconductors; zinc compoundsNotes
Received 8 May 2009, Accepted 12 August 2009, Published online 21 September 2009.More
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ETH Bibliography
yes
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