102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz
Metadata only
Date
2009Type
- Journal Article
Publication status
publishedExternal links
Journal / series
IEEE Electron Device LettersVolume
Pages / Article No.
Publisher
IEEESubject
GaN on Si; high-electron mobility transistor (HEMT); millimeter-wave transistorsMore
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