102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

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Author
Sun, Haifeng
Alt, Andreas R.
Benedickter, Hansruedi
Bolognesi, C. R.
Feltin, Eric
Carlin, Jean-François
Gonschorek, Marcus
Grandjean, Nicolas
Maier, Thomas
Quay, Rüdiger
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Date
2009
Type
  • Journal Article
Publication status
published
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Journal / series
IEEE Electron Device Letters
Volume
30(8)
Pages / Article No.
796 - 798
Publisher
IEEE
Subject
GaN on Si; high-electron mobility transistor (HEMT); millimeter-wave transistors
Notes
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Citations
Cited 37 times in Web of Science
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yes
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