205-GHz (Al,In)N/GaN HEMTs

Metadata only

Author

Date

2010

Type

Journal Article

ETH Bibliography

yes

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Publication status

published

External links

Journal / series

IEEE Electron Device Letters

Volume

31(9)

Pages / Article No.

957 - 959

Publisher

IEEE

Subject

AlInN/GaN; high-electron-mobility transistor (HEMT); millimeter-wave transistors

Organisational unit

03721 - Bolognesi, Colombo / Bolognesi, Colombo

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ETH Bibliography

yes

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Research Collection