205-GHz (Al,In)N/GaN HEMTs

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Author
Sun, Haifeng
Alt, Andreas R.
Benedickter, Hansruedi
Feltin, Eric
Carlin, Jean-François
Gonschorek, Marcus
Grandjean, Nicolas R.
Bolognesi, C.R.
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Date
2010
Type
  • Journal Article
Publication status
published
External links
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Journal / series
IEEE Electron Device Letters
Volume
31(9)
Pages / Article No.
957 - 959
Publisher
IEEE
Subject
AlInN/GaN; high-electron-mobility transistor (HEMT); millimeter-wave transistors
Organisational unit
03721 - Bolognesi, Colombo  
Notes
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Citations
Cited 113 times in Web of Science
ETH Bibliography
yes
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