100-nm-Gate (Al In)N/GaN HEMTs Grown on SiC With fT = 144 GHz
Metadata only
Date
2010-04Type
- Journal Article
Publication status
publishedJournal / series
IEEE Electron Device LettersVolume
Pages
Publisher
IEEESubject
AllnN/GaN; high-electron-mobility transistor (HEMT); millimeter-wave transistorsOrganisational unit
03721 - Bolognesi, Colombo
Notes
Manusript received 18 November 2009, Revised 16 December 2009, First published 22 February 2010, Current version published 24 March 2010.More
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