100-nm-Gate (Al In)N/GaN HEMTs Grown on SiC With fT = 144 GHz

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Author
Sun, Haifeng
Alt, Andreas R.
Benedickter, Hansruedi
Feltin, Eric
Carlin, Jean-François
Gonschorek, Marcus
Grandjean, Nicolas R.
Bolognesi, Colombo R.
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Date
2010-04
Type
  • Journal Article
Publication status
published
External links
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Journal / series
IEEE Electron Device Letters
Volume
31(4)
Pages / Article No.
293 - 295
Publisher
IEEE
Subject
AllnN/GaN; high-electron-mobility transistor (HEMT); millimeter-wave transistors
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
Notes
Manusript received 18 November 2009, Revised 16 December 2009, First published 22 February 2010, Current version published 24 March 2010.
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Citations
Cited 33 times in Web of Science
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