100-nm-Gate (Al In)N/GaN HEMTs Grown on SiC With fT = 144 GHz

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Author

Date

2010-04

Type

Journal Article

ETH Bibliography

yes

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Publication status

published

External links

Journal / series

IEEE Electron Device Letters

Volume

31(4)

Pages / Article No.

293 - 295

Publisher

IEEE

Subject

AllnN/GaN; high-electron-mobility transistor (HEMT); millimeter-wave transistors

Organisational unit

03721 - Bolognesi, Colombo / Bolognesi, Colombo

Notes

Manusript received 18 November 2009, Revised 16 December 2009, First published 22 February 2010, Current version published 24 March 2010.

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