A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs
- Conference Paper
Journal / seriesProceedings of 24th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Pages / Article No.
Organisational unit03380 - Huang, Qiuting
NotesReceived 21 May 2013, Received in revised form 24 June 2013, Accepted 9 July 2013.
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