Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 mu m
dc.contributor.author
Ohtani, K.
dc.contributor.author
Beck, Mattias
dc.contributor.author
Faist, Jérôme
dc.date.accessioned
2017-06-19T15:48:44Z
dc.date.available
2017-06-19T15:48:44Z
dc.date.issued
2014-09
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.4896542
dc.identifier.uri
http://hdl.handle.net/20.500.11850/164120
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 mu m
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
105
ethz.journal.issue
12
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
121115-1
ethz.pages.end
121115-4
ethz.size
4 p.
ethz.notes
Received 2 July 2014, Accepted 14 September 2014, Published online 26 September 2014.
ethz.identifier.wos
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-19T15:50:13Z
ethz.source
ECIT
ethz.identifier.importid
imp593652759f37813149
ethz.ecitpid
pub:143878
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-26T21:46:42Z
ethz.rosetta.lastUpdated
2023-02-06T14:19:31Z
ethz.rosetta.versionExported
true
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