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dc.contributor.author
Jin, Seonghoon
dc.contributor.author
Wettstein, Andreas
dc.contributor.author
Choi, Woosung
dc.contributor.author
Bufler, Fabian M.
dc.contributor.author
Lyumkis, Eugeny
dc.date.accessioned
2017-06-08T22:05:39Z
dc.date.available
2017-06-08T22:05:39Z
dc.date.issued
2009-09
dc.identifier.isbn
978-1-4244-3974-8
dc.identifier.other
10.1109/SISPAD.2009.5290216
dc.identifier.uri
http://hdl.handle.net/20.500.11850/16422
dc.language.iso
en
dc.publisher
IEEE
dc.title
Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation
dc.type
Conference Paper
ethz.book.title
International Conference on Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09
ethz.size
4 p.
ethz.event
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009)
ethz.event.date
September 9-11, 2009
ethz.notes
Current Version Published 22 Oktober 2009.
ethz.publication.place
Piscataway, N.J.
ethz.publication.status
published
ethz.date.deposited
2017-06-08T22:05:41Z
ethz.source
ECIT
ethz.identifier.importid
imp59364c647e1e538144
ethz.ecitpid
pub:28297
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-14T14:47:17Z
ethz.rosetta.lastUpdated
2018-01-09T06:37:35Z
ethz.rosetta.versionExported
true
ethz.COinS
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