Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Hurley, P. K.
Negara, M. A.
- Conference Paper
Journal / seriesSolid state electronics
SubjectHigh-k gate stacks; HfO2; Reverse modeling; Direct tunneling; Electron effective mass; Electron affinity; Bulk properties; 32 nm and 22 nm technology nodes
NotesReceived 6 June 2008, Revised 31 July 2008, Accepted 4 September 2008, Available online 7 February 2009.
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