Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

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Author
Monaghan, S.
Hurley, P. K.
Cherkaoui, K.
Negara, M. A.
Schenk, A.
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Date
2009-04
Type
    Conference Paper
Publication status
published
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Journal / series
Solid-State Electronics
Volume
53(4)
Pages / Article No.
438 - 444
Publisher
Elsevier
Event
9th Conference on Ultimate Integration on Silicon Conference (ULIS 2008), Udine, Italy, March 12-14, 2008
Subject
High-k gate stacks; HfO2; Reverse modeling; Direct tunneling; Electron effective mass; Electron affinity; Bulk properties; 32 nm and 22 nm technology nodes
Notes
Received 6 June 2008, Revised 31 July 2008, Accepted 4 September 2008, Available online 7 February 2009.
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