Suppression of gate-induced drain leakage by optimization of junction profiles in 22 nm and 32 nm SOI nFETs
- Conference Paper
Journal / seriesSolid-State Electronics
Pages / Article No.
SubjectTCAD; Simulation; Gate induced drain leakage; Non-local band-to-band tunneling; High-K gate stacks; DGSOI; SGSOI; 22 nm technology node
Organisational unit03228 - Fichtner, Wolfgang
NotesReceived 23 April 2009, Revised 11 June 2009, Accepted 21 August 2009, Available online 29 December 2009.
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