Suppression of gate-induced drain leakage by optimization of junction profiles in 22 nm and 32 nm SOI nFETs

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Autor(in)
Schenk, Andreas
Datum
2010
Typ
    Conference Paper
Publikationsstatus
published
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Zeitschrift / Serie
Solid-State Electronics
Band
54(2)
Seiten / Artikelnummer
115 - 122
Verlag
Elsevier
Konferenz
5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009), Göteborg, Sweden, January 19-21, 2009
Thema
TCAD; Simulation; Gate induced drain leakage; Non-local band-to-band tunneling; High-K gate stacks; DGSOI; SGSOI; 22 nm technology node
Organisationseinheit
03228 - Fichtner, Wolfgang  
Anmerkungen
Received 23 April 2009, Revised 11 June 2009, Accepted 21 August 2009, Available online 29 December 2009.
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