Suppression of gate-induced drain leakage by optimization of junction profiles in 22 nm and 32 nm SOI nFETs
dc.contributor.author
Schenk, Andreas
dc.date.accessioned
2017-06-08T22:19:29Z
dc.date.available
2017-06-08T22:19:29Z
dc.date.issued
2010
dc.identifier.issn
0038-1101
dc.identifier.other
10.1016/j.sse.2009.12.005
dc.identifier.uri
http://hdl.handle.net/20.500.11850/16844
dc.language.iso
en
dc.publisher
Elsevier
dc.subject
TCAD
dc.subject
Simulation
dc.subject
Gate induced drain leakage
dc.subject
Non-local band-to-band tunneling
dc.subject
High-K gate stacks
dc.subject
DGSOI
dc.subject
SGSOI
dc.subject
22 nm technology node
dc.title
Suppression of gate-induced drain leakage by optimization of junction profiles in 22 nm and 32 nm SOI nFETs
dc.type
Conference Paper
ethz.journal.title
Solid-State Electronics
ethz.journal.volume
54
ethz.journal.issue
2
ethz.journal.abbreviated
Solid-State Electron.
ethz.pages.start
115
ethz.pages.end
122
ethz.event
5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009)
ethz.event.location
Göteborg, Sweden
ethz.event.date
January 19-21, 2009
ethz.notes
Received 23 April 2009, Revised 11 June 2009, Accepted 21 August 2009, Available online 29 December 2009.
ethz.identifier.wos
ethz.identifier.nebis
000055320
ethz.publication.place
Kidlington
ethz.publication.status
published
ethz.leitzahl
03228 - Fichtner, Wolfgang
ethz.leitzahl.certified
03228 - Fichtner, Wolfgang
ethz.date.deposited
2017-06-08T22:19:46Z
ethz.source
ECIT
ethz.identifier.importid
imp59364c6c7b16290877
ethz.ecitpid
pub:28765
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-13T07:02:53Z
ethz.rosetta.lastUpdated
2024-02-01T15:37:52Z
ethz.rosetta.versionExported
true
ethz.COinS
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