Calculating the trap density of states in organic field-effect transistors from experiment
A comparison of different methods
dc.contributor.author
Kalb, Wolfgang L.
dc.contributor.author
Batlogg, Bertram
dc.date.accessioned
2017-06-08T22:29:45Z
dc.date.available
2017-06-08T22:29:45Z
dc.date.issued
2010
dc.identifier.issn
1098-0121
dc.identifier.issn
0163-1829
dc.identifier.issn
1550-235X
dc.identifier.issn
0556-2805
dc.identifier.issn
2469-9969
dc.identifier.issn
1095-3795
dc.identifier.issn
2469-9950
dc.identifier.other
10.1103/PhysRevB.81.035327
dc.identifier.uri
http://hdl.handle.net/20.500.11850/17275
dc.language.iso
en
dc.publisher
American Physical Society
dc.title
Calculating the trap density of states in organic field-effect transistors from experiment
dc.type
Journal Article
ethz.title.subtitle
A comparison of different methods
ethz.journal.title
Physical Review B
ethz.journal.volume
81
ethz.journal.issue
3
ethz.journal.abbreviated
Phys. Rev., B
ethz.pages.start
035327
ethz.size
13 p.
ethz.notes
Received 9 October 2009, Published 19 January 2010.
ethz.identifier.wos
ethz.identifier.nebis
001888782
ethz.publication.place
Ridge, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.date.deposited
2017-06-08T22:29:55Z
ethz.source
ECIT
ethz.identifier.importid
imp59364c766339089140
ethz.ecitpid
pub:29239
ethz.eth
yes
ethz.availability
Metadata only
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2017-07-12T22:03:29Z
ethz.rosetta.lastUpdated
2022-03-28T08:29:01Z
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true
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