107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

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Author
Tirelli, Stefano
Marti, Diego
Sun, Haifeng
Alt, Andreas R.
Benedickter, Hansruedi
Piner, Edwin L.
Bolognesi, Colombo R.
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Date
2010-04
Type
    Journal Article
Publication status
published
External links
Journal / series
IEEE Electron Device Letters
Volume
31(4)
Pages / Article No.
296 - 298
Publisher
IEEE
Subject
AlGaN/ GaN; high-electron mobility transistors (HEMTs); high-frequency performance; high-resistivity silicon (HR-Si); millimeter-wave transistors
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
Notes
Manuscript received 4 November 2009, Revised 21 December 2009, Published online 25 February 2010, Current version published 24 March 2010.
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