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dc.contributor.author
Montes Bajo, Miguel
dc.contributor.author
Hierro, Adrian
dc.contributor.author
María Ulloa, José
dc.contributor.author
Miguel-Sánchez, Javier
dc.contributor.author
Guzmán, Álvaro
dc.contributor.author
Damilano, Benjamin
dc.contributor.author
Hugues, Maxime
dc.contributor.author
Al Khalfioui, Mohamed
dc.contributor.author
Duboz, Jean-Yves
dc.contributor.author
Massies, Jean
dc.date.accessioned
2017-06-08T22:41:27Z
dc.date.available
2017-06-08T22:41:27Z
dc.date.issued
2010
dc.identifier.issn
0018-9197
dc.identifier.issn
1558-1713
dc.identifier.other
10.1109/JQE.2010.2043219
dc.identifier.uri
http://hdl.handle.net/20.500.11850/17608
dc.language.iso
en
dc.publisher
IEEE
dc.subject
Current spreading efficiency
dc.subject
dilute nitrides
dc.subject
Fermi level pinning
dc.subject
GaInNAs
dc.subject
quantum-well laser diodes
dc.title
Current Spreading Efficiency and Fermi Level Pinning in GaInNAs-GaAs Quantum-Well Laser Diodes
dc.type
Journal Article
ethz.journal.title
IEEE Journal of Quantum Electronics
ethz.journal.volume
46
ethz.journal.issue
7
ethz.journal.abbreviated
IEEE j. quantum electron.
ethz.pages.start
1058
ethz.pages.end
1065
ethz.notes
Manuscript received December 08 2009, Revised January 26 2010, Current version published March 31 2010.
ethz.identifier.wos
ethz.identifier.nebis
000047876
ethz.publication.place
New York
ethz.publication.status
published
ethz.date.deposited
2017-06-08T22:41:51Z
ethz.source
ECIT
ethz.identifier.importid
imp59364c7e0d9d775946
ethz.ecitpid
pub:29590
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-18T17:37:26Z
ethz.rosetta.lastUpdated
2018-08-02T05:35:49Z
ethz.rosetta.versionExported
true
ethz.COinS
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