Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

Abstract

In this work, we investigate high-mobility two-dimensional electron gases in AlxGa1-xAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we found that two different sample configurations can be set in situ with mobilities differing by a factor of more than two in a wide range of densities. This observation is discussed in the context of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.