Characterization of Si volume- and delta-doped InGaAs grown by molecular beam epitaxy

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Author
Fedoryshyn, Y.
Beck, Mattiascc
Kaspar, P.
Jäckel, Heinz
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Date
2010
Type
    Journal Article
Publication status
published
External links
Journal / series
Journal of Applied Physics
Volume
107(9)
Pages / Article No.
093710
Publisher
American Institute of Physics
Subject
Doping profiles; Elemental semiconductors; Gallium arsenide; III-V semiconductors; Indium compounds; Molecular beam epitaxial growth; Photoluminescence; Secondary-ion mass spectroscopy (SIMS); Semiconductor doping; Semiconductor growth; Silicon
Organisational unit
03386 - Jäckel, Heinz
03759 - Faist, Jérôme / Faist, Jérôme  
Notes
Received 2 January 2010, Accepted 15 March 2010, Published online 6 May 2010.
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Citations
Cited 20 times in Web of Science
ETH Bibliography
yes
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