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dc.contributor.author
Vollenweider, Kilian
dc.contributor.author
Sahli, Beat
dc.contributor.author
Fichtner, Wolfgang
dc.date.accessioned
2017-06-08T23:03:26Z
dc.date.available
2017-06-08T23:03:26Z
dc.date.issued
2010
dc.identifier.issn
1098-0121
dc.identifier.issn
0163-1829
dc.identifier.issn
1550-235X
dc.identifier.issn
0556-2805
dc.identifier.issn
2469-9969
dc.identifier.issn
1095-3795
dc.identifier.other
10.1103/PhysRevB.81.174119
dc.identifier.uri
http://hdl.handle.net/20.500.11850/18480
dc.language.iso
en
dc.publisher
American Physical Society
dc.title
Ab initio calculations of arsenic in silicon
dc.type
Journal Article
ethz.title.subtitle
Diffusion mechanism and strain dependence
ethz.journal.title
Physical Review B
ethz.journal.volume
81
ethz.journal.issue
17
ethz.journal.abbreviated
Phys. Rev., B
ethz.pages.start
174119
ethz.notes
Received 27 April 2010, Published 26 May 2010.
ethz.identifier.wos
ethz.identifier.nebis
001888782
ethz.publication.place
Ridge, NY
ethz.publication.status
published
ethz.leitzahl
03228 - Fichtner, Wolfgang
ethz.leitzahl.certified
03228 - Fichtner, Wolfgang
ethz.date.deposited
2017-06-08T23:03:31Z
ethz.source
ECIT
ethz.identifier.importid
imp59364c90bdb2975989
ethz.ecitpid
pub:30627
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-14T23:26:11Z
ethz.rosetta.lastUpdated
2018-08-02T05:44:17Z
ethz.rosetta.versionExported
true
ethz.COinS
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