Influence of thermal losses at the gate contact of Si nanowire transistors: A phenomenological treatment in quantum transport theory
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Date
2017-03-06Type
- Journal Article
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
Applied Physics LettersVolume
Pages / Article No.
Publisher
American Institute of PhysicsOrganisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
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ETH Bibliography
yes
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