- Journal Article
Rights / licenseCreative Commons Attribution 3.0 Unported
The effect of temperature and parasitic photocurrent on event-based dynamic vision sensors (DVS) is important because of their application in uncontrolled robotic, automotive, and surveillance applications. This paper considers the temperature dependence of DVS threshold temporal contrast (TC), dark current, and background activity caused by junction leakage. New theory shows that if bias currents have a constant ratio, then ideally the DVS threshold TC is temperature independent, but the presence of temperature dependent junction leakage currents causes nonideal behavior at elevated temperature. Both measured photodiode dark current and leakage induced event activity follow Arhenius activation. This paper also defines a new metric for parasitic photocurrent quantum efficiency and measures the sensitivity of DVS pixels to parasitic photocurrent Show more
Journal / seriesIEEE Transactions on Electron Devices
Pages / Article No.
Subjectjunction leakage; CMOS image sensors; photocurrent; dark current; vision sensor
Organisational unit02533 - Institut für Neuroinformatik (INI) / Institute of Neuroinformatics (INI)
MoreShow all metadata