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dc.contributor.author
Gramse, Georg
dc.contributor.author
Kölker, Alexander
dc.contributor.author
Lim, Tingbin
dc.contributor.author
Stock, Taylor J.Z.
dc.contributor.author
Solanki, Hari
dc.contributor.author
Schofield, Steven R.
dc.contributor.author
Brinciotti, Enrico
dc.contributor.author
Aeppli, Gabriel
dc.contributor.author
Kienberger, Ferry
dc.contributor.author
Curson, Neil J.
dc.date.accessioned
2017-11-16T10:48:05Z
dc.date.available
2017-10-06T03:37:53Z
dc.date.available
2017-11-16T10:48:05Z
dc.date.issued
2017-06-02
dc.identifier.issn
2375-2548
dc.identifier.other
10.1126/sciadv.1602586
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/191747
dc.identifier.doi
10.3929/ethz-b-000191747
dc.description.abstract
It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the characteristics of buried dopant nanostructures could only be inferred from destructive techniques and/or the performance of the final electronic device; this severely limits engineering and manufacture of real-world devices based on atomic-scale lithography. Here, we use scanning microwave microscopy (SMM) to image and electronically characterize three-dimensional phosphorus nanostructures fabricated via scanning tunneling microscope–based lithography. The SMM measurements, which are completely nondestructive and sensitive to as few as 1900 to 4200 densely packed P atoms 4 to 15 nm below a silicon surface, yield electrical and geometric properties in agreement with those obtained from electrical transport and secondary ion mass spectroscopy for unpatterned phosphorus δ layers containing ~1013 P atoms. The imaging resolution was 37 ± 1 nm in lateral and 4 ± 1 nm in vertical directions, both values depending on SMM tip size and depth of dopant layers. In addition, finite element modeling indicates that resolution can be substantially improved using further optimized tips and microwave gradient detection. Our results on three-dimensional dopant structures reveal reduced carrier mobility for shallow dopant layers and suggest that SMM could aid the development of fabrication processes for surface code quantum computers.
en_US
dc.language.iso
en
en_US
dc.publisher
AAAS
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.title
Nondestructive imaging of atomically thin nanostructures buried in silicon
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
dc.date.published
2017-06-28
ethz.journal.title
Science Advances
ethz.journal.volume
3
en_US
ethz.journal.issue
6
en_US
ethz.journal.abbreviated
Sci Adv
ethz.pages.start
e1602586
en_US
ethz.size
8 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.publication.place
Washington, DC
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2017-10-06T03:38:15Z
ethz.source
WOS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-11-16T10:48:08Z
ethz.rosetta.lastUpdated
2018-11-06T01:47:02Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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