Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs - Research Collection

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Author

Kakarla, Bhagyalakshmi

Grossner, Ulrike

Nida, Selamnesh

Ziemann, Thomas

Kovacevic, Ivana

Müting, Johanna

Date

2017-09

Type

Journal Article

Citations

Cited 1 times in Web of Science

ETH Bibliography

yes

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Publication status

published

External links

https://doi.org/10.1016/j.microrel.2017.07.016

Journal / series

Microelectronics Reliability

Volume

76-77

Pages / Article No.

267 - 271

Publisher

Elsevier

Subject

SiC MOSFET; Design trade-off; Ruggedness; Short circuit; Avalanche

Organisational unit

09480 - Grossner, Ulrike

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Citations

Cited 1 times in Web of Science

ETH Bibliography

yes

Altmetrics