Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs

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Author
Kakarla, Bhagyalakshmi
Grossner, Ulrike
Nida, Selamnesh
Ziemann, Thomas
Kovacevic, Ivana
Müting, Johanna
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Date
2017-09
Type
  • Journal Article
Publication status
published
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Journal / series
Microelectronics Reliability
Volume
76-77
Pages
267 - 271
Publisher
Elsevier
Subject
SiC MOSFET; Design trade-off; Ruggedness; Short circuit; Avalanche
Organisational unit
09480 - Grossner, Ulrike
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Citations
Cited 1 times in Web of Science
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