- Journal Article
Reliability represents a very important factor for the design of Silicon Carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs). Ruggedness of the device during abnormal operating conditions like the short circuit (SC) and avalanche conduction (during unclamped inductive switching - UIS) is an important aspect of reliability. Often, variation in design parameters to improve ruggedness during SC and UIS show negative impact on the nominal operating performance. This paper presents a comprehensive analysis of the impact of modification of p-base doping on the performance of a 1.2 kV SiC MOSFET during SC and UIS by means of TCAD simulations. The improvement in MOSFET ruggedness by optimizing the p-base doping and its influence on the nominal operating performance is evaluated. Show more
Journal / seriesMicroelectronics Reliability
Pages / Article No.
SubjectSiC MOSFET; Design trade-off; Ruggedness; Short circuit; Avalanche
Organisational unit09480 - Grossner, Ulrike / Grossner, Ulrike
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