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Date
2017-09Type
- Journal Article
Citations
Cited 8 times in
Web of Science
Cited 11 times in
Scopus
ETH Bibliography
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Abstract
Reliability represents a very important factor for the design of Silicon Carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs). Ruggedness of the device during abnormal operating conditions like the short circuit (SC) and avalanche conduction (during unclamped inductive switching - UIS) is an important aspect of reliability. Often, variation in design parameters to improve ruggedness during SC and UIS show negative impact on the nominal operating performance. This paper presents a comprehensive analysis of the impact of modification of p-base doping on the performance of a 1.2 kV SiC MOSFET during SC and UIS by means of TCAD simulations. The improvement in MOSFET ruggedness by optimizing the p-base doping and its influence on the nominal operating performance is evaluated. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000192538Publication status
publishedExternal links
Journal / series
Microelectronics ReliabilityVolume
Pages / Article No.
Publisher
ElsevierSubject
SiC MOSFET; Design trade-off; Ruggedness; Short circuit; AvalancheOrganisational unit
09480 - Grossner, Ulrike / Grossner, Ulrike
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Show all metadata
Citations
Cited 8 times in
Web of Science
Cited 11 times in
Scopus
ETH Bibliography
yes
Altmetrics