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dc.contributor.author
Kakarla, Bhagyalakshmi
dc.contributor.author
Nida, Selamnesh
dc.contributor.author
Müting, Johanna
dc.contributor.author
Ziemann, Thomas
dc.contributor.author
Kovacevic, Ivana
dc.contributor.author
Grossner, Ulrike
dc.date.accessioned
2021-03-18T06:44:45Z
dc.date.available
2017-10-06T05:13:42Z
dc.date.available
2017-10-20T15:43:53Z
dc.date.available
2018-01-09T10:55:55Z
dc.date.available
2021-03-17T14:53:47Z
dc.date.available
2021-03-18T06:44:45Z
dc.date.issued
2017-09
dc.identifier.issn
0026-2714
dc.identifier.issn
1872-941X
dc.identifier.other
10.1016/j.microrel.2017.07.016
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/192538
dc.identifier.doi
10.3929/ethz-b-000192538
dc.description.abstract
Reliability represents a very important factor for the design of Silicon Carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs). Ruggedness of the device during abnormal operating conditions like the short circuit (SC) and avalanche conduction (during unclamped inductive switching - UIS) is an important aspect of reliability. Often, variation in design parameters to improve ruggedness during SC and UIS show negative impact on the nominal operating performance. This paper presents a comprehensive analysis of the impact of modification of p-base doping on the performance of a 1.2 kV SiC MOSFET during SC and UIS by means of TCAD simulations. The improvement in MOSFET ruggedness by optimizing the p-base doping and its influence on the nominal operating performance is evaluated.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Elsevier
en_US
dc.rights.uri
http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject
SiC MOSFET
en_US
dc.subject
Design trade-off
en_US
dc.subject
Ruggedness
en_US
dc.subject
Short circuit
en_US
dc.subject
Avalanche
en_US
dc.title
Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
dc.date.published
2017-07-21
ethz.journal.title
Microelectronics Reliability
ethz.journal.volume
76-77
en_US
ethz.journal.abbreviated
Microelectron. reliab.
ethz.pages.start
267
en_US
ethz.pages.end
271
en_US
ethz.size
6 p. accepted version
en_US
ethz.version.deposit
acceptedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Kidlington
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.date.deposited
2017-10-06T05:13:44Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-10-20T15:43:55Z
ethz.rosetta.lastUpdated
2022-03-29T05:50:53Z
ethz.rosetta.versionExported
true
ethz.COinS
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