Tuning of structure inversion asymmetry by the δ-doping position in (001)-grown GaAs quantum wells
Publication status
publishedJournal / series
Applied Physics LettersVolume
Pages / Article No.
Publisher
American Institute of PhysicsSubject
aluminium compounds; gallium arsenide; III-V semiconductors; impurity distribution; photoconductivity; photovoltaic effects; segregation; semiconductor doping; semiconductor growth; semiconductor quantum wells; siliconOrganisational unit
03833 - Wegscheider, Werner / Wegscheider, Werner
Notes
Received 6 March 2009, Accepted 29 May 2009, Published online 19 June 2009.More
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