Tuning of structure inversion asymmetry by the δ-doping position in (001)-grown GaAs quantum wells

Thumbnail
Metadata only
Author
Lechner, V.
Golub, L. E.
Olbrich, P.
Stachel, S.
Schuh, D.
Wegscheider, W.
Bel’kov, V. V.
Ganichev, S. D.
Show all
Date
2009-06-15
Type
    Journal Article
Publication status
published
External links
Journal / series
Applied Physics Letters
Volume
94(24)
Pages / Article No.
242109
Publisher
American Institute of Physics
Subject
aluminium compounds; gallium arsenide; III-V semiconductors; impurity distribution; photoconductivity; photovoltaic effects; segregation; semiconductor doping; semiconductor growth; semiconductor quantum wells; silicon
Organisational unit
03833 - Wegscheider, Werner / Wegscheider, Werner  
Notes
Received 6 March 2009, Accepted 29 May 2009, Published online 19 June 2009.
More
Show all metadata
ETH Bibliography
yes
Altmetrics