Tuning of structure inversion asymmetry by the δ-doping position in (001)-grown GaAs quantum wells

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Author
Lechner, V.
Golub, L. E.
Olbrich, P.
Stachel, S.
Schuh, D.
Wegscheider, W.
Bel’kov, V. V.
Ganichev, S. D.
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Date
2009-06-15
Type
  • Journal Article
Publication status
published
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Journal / series
Applied Physics Letters
Volume
94(24)
Pages
242109
Publisher
American Institute of Physics
Subject
aluminium compounds; gallium arsenide; III-V semiconductors; impurity distribution; photoconductivity; photovoltaic effects; segregation; semiconductor doping; semiconductor growth; semiconductor quantum wells; silicon
Organisational unit
03833 - Wegscheider, Werner
Notes
Received 6 March 2009, Accepted 29 May 2009, Published online 19 June 2009.
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Citations
Cited 38 times in Web of Science
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