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dc.contributor.author
Sun, Haifeng
dc.contributor.author
Alt, Andreas R.
dc.contributor.author
Benedickter, Hansruedi
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2017-06-08T23:50:24Z
dc.date.available
2017-06-08T23:50:24Z
dc.date.issued
2009
dc.identifier.issn
0741-3106
dc.identifier.issn
1558-0563
dc.identifier.other
10.1109/LED.2008.2010339
dc.identifier.uri
http://hdl.handle.net/20.500.11850/20218
dc.language.iso
en
dc.publisher
IEEE
dc.subject
MODFETS
dc.subject
Millimeter-wave FETs
dc.subject
noise measurement
dc.title
High-performance 0.1-mum gate AlGaN/GaN HEMTs on silicon with low-noise figure at 20 GHz
dc.type
Journal Article
ethz.journal.title
IEEE Electron Device Letters
ethz.journal.volume
30
ethz.journal.issue
2
ethz.journal.abbreviated
IEEE Electron Device Lett.
ethz.pages.start
107
ethz.pages.end
109
ethz.identifier.wos
ethz.identifier.nebis
000008013
ethz.publication.place
New York
ethz.publication.status
published
ethz.date.deposited
2017-06-08T23:50:43Z
ethz.source
ECIT
ethz.identifier.importid
imp59364cb46c56f60078
ethz.ecitpid
pub:32665
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-18T08:33:53Z
ethz.rosetta.lastUpdated
2021-02-14T06:16:23Z
ethz.rosetta.versionExported
true
ethz.COinS
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