Impact of CBr4, V/III ratio, temperature and AsH3 concentration on MOVPE growth of GaAsSb:C
Bolognesi, C. R.
- Journal Article
Journal / seriesJournal of crystal growth
Pages / Article No.
SubjectCharacterization; Doping; Metal-organic vapor-phase epitaxy; Antimonides; Semiconducting III-V materials; Bipolar transistors
NotesReceived 23 June 2008, Revised 9 January 2009, Accepted 21 January 2009, Available online 29 January 2009.
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