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dc.contributor.author
Maryński, Aleksander
dc.contributor.author
Syperek, Marcin
dc.contributor.author
Pieczarka, MacIej
dc.contributor.author
Gawełczyk, Michał
dc.contributor.author
Misiewicz, Jan
dc.contributor.author
Liverini, Valeria
dc.contributor.author
Beck, Mattias
dc.contributor.author
Faist, Jérôme
dc.contributor.author
Sȩk, Grzegorz
dc.date.accessioned
2018-01-18T13:23:37Z
dc.date.available
2017-12-05T05:35:24Z
dc.date.available
2018-01-18T13:23:37Z
dc.date.issued
2017-10-22
dc.identifier.issn
1742-6588
dc.identifier.issn
1742-6596
dc.identifier.other
10.1088/1742-6596/906/1/012008
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/217019
dc.identifier.doi
10.3929/ethz-b-000217019
dc.description.abstract
The lateral interdot coupling is investigated in high density (~10 cm−2 ) self-assembled InAs quantum dots (QDs) grown on an InP substrate. Two types of structures are selected for this study, in which QDs are embedded into an InAlAs matrix, forming nearly twice stronger confinement for an electron and a hole than expected for an InAlGaAs counterpart. Resonantly injected low carrier population in these families of QDs gives very different spectral and temporal response in the temperature range of 5-30 K. While InAs/InAlGaAs QDs show monotonic temperature quench of photoluminescence (PL), the process seems to be ineffective in the family of InAs/InAlAs dots. Moreover, the PL decay traces for InAs/InAlGaAs QDs reveal a two-exponential decay as compared to a mono-exponential one observed for InAs/InAlAs dots. While a short decay component of ≤1.9 ns has been attributed to recombination of an electron-hole pair confined in the dot, the long one of >2.4 ns, observed exclusively for InAs/InGaAlAs QDs, is attributed to recombination of spatially separated electron-hole pairs formed due to carrier exchange between adjacent dots.
en_US
dc.language.iso
en
en_US
dc.publisher
Institute of Physics
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/3.0/
dc.title
Lateral interdot coupling among dense ensemble of InAs quantum dots grown on InP substrate observed at cryogenic temperatures
en_US
dc.type
Conference Paper
dc.rights.license
Creative Commons Attribution 3.0 Unported
ethz.journal.title
Journal of Physics: Conference Series
ethz.journal.volume
906
en_US
ethz.journal.issue
1
en_US
ethz.pages.start
012008
en_US
ethz.size
4 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.event
20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 20)
en_US
ethz.event.location
Buffalo, NY, USA
en_US
ethz.event.date
July 17–21, 2017
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Bristol
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-12-05T05:35:33Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2018-01-18T13:23:41Z
ethz.rosetta.lastUpdated
2018-11-06T07:04:47Z
ethz.rosetta.versionExported
true
ethz.COinS
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