MOVPE growth and characterization of GaInAsSb:C layers for DHBT applications

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Autor(in)
Ostinelli, Olivier
Döbeli, Max
Bolognesi, Colombo R.
Datum
2017-12
Typ
    Other Conference Item
Publikationsstatus
unpublished
Konferenz
32. Workshop des DGKK-Arbeitskreises "Epitaxie von III/V Halbleitern", Freiberg, Germany, December 7-8, 2017
Organisationseinheit
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
Anmerkungen
Conference lecture presented on 7. December 2017 during the Session 1b: "Antimonides Characterization & Simulation".
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