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dc.contributor.author
Ostinelli, Oliver
dc.contributor.author
Doebeli, M.
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2018-01-11T08:31:52Z
dc.date.available
2017-12-19T09:43:42Z
dc.date.available
2018-01-11T08:30:57Z
dc.date.available
2018-01-11T08:31:52Z
dc.date.issued
2017-12
dc.identifier.uri
http://hdl.handle.net/20.500.11850/222556
dc.language.iso
en
en_US
dc.title
MOVPE growth and characterization of GaInAsSb:C layers for DHBT applications
en_US
dc.type
Conference Paper
ethz.event
32. Workshop des DGKK-Arbeitskreises "Epitaxie von III/V Halbleitern"
en_US
ethz.event.location
Freiberg, Germany
en_US
ethz.event.date
December 7-8, 2017
en_US
ethz.notes
Conference lecture on 7 December 2017 Session 1b: Antimonides Characterization & Simulation
en_US
ethz.publication.status
accepted
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
en_US
ethz.date.deposited
2017-12-19T09:43:43Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.exportRequired
true
ethz.COinS
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