Tuning the intersubband absorption in strained AlAsSb/InGaAs quantum wells towards the telecommunications wavelength range

Thumbnail
Metadata only
Author
Cristea, P.
Fedoryshyn, Y.
Holzman, J.F.
Robin, F.
Jäckel, H.
Müller, E.
Faist, Jérômecc
Show all
Date
2006
Type
    Journal Article
Publication status
published
External links
Journal / series
Journal of Applied Physics
Volume
100(11)
Pages / Article No.
116104
Publisher
American Institute of Physics
Subject
Aluminium compounds; Indium compounds; Gallium arsenide; III-V semiconductors; Semiconductor quantum wells; Silicon; Molecular beam epitaxial growth; Internal stresses; SCF calculations; Schrodinger equation; Poisson equation; Transmission electron microscopy
Organisational unit
03759 - Faist, Jérôme / Faist, Jérôme  
03386 - Jäckel, Heinz
Notes
Received 3 May 2006, Accepted 2 October 2006, Published online 5 December 2006.
More
Show all metadata
Citations
Cited 15 times in Web of Science
ETH Bibliography
yes
Altmetrics