Highly reflective AlGaAsSb/InP Bragg reflector at 1.55 μm grown by MOVPE

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Author
Ostinelli, O.
Haiml, M.
Grange, R.
Almuneau, G.
Ebnöther, M.
Gini, E.
Müller, E.
Keller, U.
Bächtold, W.
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Date
2006-01
Type
  • Journal Article
Publication status
published
External links
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Journal / series
Journal of crystal growth
Volume
286(2)
Pages
247 - 254
Publisher
Elsevier
Subject
Crystal morphology; Low-dimensional structures; Metalorganic vapor-phase epitaxy; Antimonides; Semiconducting indium phosphide; Heterojunction semiconductor devices
Organisational unit
03371 - Keller, Ursula
Notes
Received 6 June 2005, Revised 13 September 2005, Accepted 16 September 2005, Available online 28 November 2005.
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Citations
Cited 8 times in Web of Science
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