At-bias extraction of access parasitic resistances in AlGaN/GaN HEMTs

Impact on device linearity and channel electron velocity
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Autor(in)
DiSanto, David W.
Bolognesi, Colombo R.
Datum
2006
Typ
    Journal Article
Publikationsstatus
published
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Zeitschrift / Serie
IEEE Transactions on Electron Devices
Band
53(12)
Seiten / Artikelnummer
2914 - 2919
Verlag
IEEE
Thema
Delay time analysis; drain resistance; electron velocity; gallium nitride; high-electron mobility transistor (HEMT); source resistance
Organisationseinheit
03472 - Professur für Feldtheorie (ehemalig)  
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
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