At-bias extraction of access parasitic resistances in AlGaN/GaN HEMTs
Impact on device linearity and channel electron velocity
Metadata only
Date
2006Type
- Journal Article
ETH Bibliography
yes
Altmetrics
Publication status
publishedExternal links
Journal / series
IEEE Transactions on Electron DevicesVolume
Pages / Article No.
Publisher
IEEESubject
Delay time analysis; drain resistance; electron velocity; gallium nitride; high-electron mobility transistor (HEMT); source resistanceOrganisational unit
03472 - Professur für Feldtheorie (ehemalig)
03721 - Bolognesi, Colombo / Bolognesi, Colombo
More
Show all metadata
ETH Bibliography
yes
Altmetrics