15-nm base type-II InP/GaAsSb/InP DHBTs with FT=384 GHz and a 6-V BVCEO

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Author
Liu, H.G.
Watkins, S.P.
Bolognesi, C.R.
Date
2006-02
Type
  • Journal Article
Publication status
published
External links
Full text via SFX
Journal / series
IEEE transactions on electron devices
Volume
53(3)
Pages
559 - 561
Publisher
IEEE
Subject
Breakdown voltage (BV); cutoff frequencies; double heterojunction bipolar transistors (DHBTs); GaAsSb; GaInAs; heterojunction bipolar transistors (HBTs); InP
Organisational unit
03721 - Bolognesi, Colombo
03472 - Professur für Feldtheorie (ehemalig)
Notes
Manuscript received 4 August 2005, Revised 22 November 2005.
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