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dc.contributor.author
Liu, H.G.
dc.contributor.author
Watkins, S.P.
dc.contributor.author
Bolognesi, C.R.
dc.date.accessioned
2017-06-09T06:10:58Z
dc.date.available
2017-06-09T06:10:58Z
dc.date.issued
2006-02
dc.identifier.issn
0018-9383
dc.identifier.issn
1557-9646
dc.identifier.other
10.1109/TED.2005.863542
dc.identifier.uri
http://hdl.handle.net/20.500.11850/24083
dc.language.iso
en
dc.publisher
IEEE
dc.subject
Breakdown voltage (BV)
dc.subject
cutoff frequencies
dc.subject
double heterojunction bipolar transistors (DHBTs)
dc.subject
GaAsSb
dc.subject
GaInAs
dc.subject
heterojunction bipolar transistors (HBTs)
dc.subject
InP
dc.title
15-nm base type-II InP/GaAsSb/InP DHBTs with FT=384 GHz and a 6-V BVCEO
dc.type
Journal Article
ethz.journal.title
IEEE Transactions on Electron Devices
ethz.journal.volume
53
ethz.journal.issue
3
ethz.journal.abbreviated
IEEE trans. electron devices
ethz.pages.start
559
ethz.pages.end
561
ethz.notes
Manuscript received 4 August 2005, Revised 22 November 2005.
ethz.identifier.nebis
000034955
ethz.publication.place
New York
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02140 - Departement Informationstechnologie und Elektrotechnik / Department of Information Technology and Electrical Engineering::02635 - Institut für Elektromagnetische Felder (IEF) / Electromagnetic Fields Laboratory (IEF)::03472 - Professur für Feldtheorie (ehemalig)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02140 - Departement Informationstechnologie und Elektrotechnik / Department of Information Technology and Electrical Engineering::02635 - Institut für Elektromagnetische Felder (IEF) / Electromagnetic Fields Laboratory (IEF)::03472 - Professur für Feldtheorie (ehemalig)
ethz.date.deposited
2017-06-09T06:11:08Z
ethz.source
ECIT
ethz.identifier.importid
imp59364d1fd523d43149
ethz.ecitpid
pub:39200
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-18T14:24:33Z
ethz.rosetta.lastUpdated
2019-01-02T04:53:06Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=15-nm%20base%20type-II%20InP/GaAsSb/InP%20DHBTs%20with%20FT=384%20GHz%20and%20a%206-V%20BVCEO&rft.jtitle=IEEE%20Transactions%20on%20Electron%20Devices&rft.date=2006-02&rft.volume=53&rft.issue=3&rft.spage=559&rft.epage=561&rft.issn=0018-9383&1557-9646&rft.au=Liu,%20H.G.&Watkins,%20S.P.&Bolognesi,%20C.R.&rft.genre=article&
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