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dc.contributor.author
Simonet, Pauline
dc.contributor.author
Hennel, Szymon
dc.contributor.author
Overweg, Hiske
dc.contributor.author
Steinacher, Richard
dc.contributor.author
Eich, Marius
dc.contributor.author
Pisoni, Riccardo
dc.contributor.author
Lee, Yongjin
dc.contributor.author
Märki, Peter
dc.contributor.author
Ihn, Thomas M.
dc.contributor.author
Ensslin, Klaus
dc.contributor.author
Beck, Mattias
dc.contributor.author
Faist, Jérôme
dc.date.accessioned
2018-02-20T11:28:38Z
dc.date.available
2017-11-22T08:45:15Z
dc.date.available
2017-12-18T13:02:48Z
dc.date.available
2018-01-17T14:06:18Z
dc.date.available
2018-02-20T11:28:38Z
dc.date.issued
2017-10
dc.identifier.issn
1367-2630
dc.identifier.other
10.1088/1367-2630/aa887e
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/243152
dc.identifier.doi
10.3929/ethz-b-000211876
dc.description.abstract
We report on Coulomb drag experiments between a bilayer graphene flake and a GaAs two-dimensional electron gas, where the charge-carrier densities of both systems can be tuned independently. For both p- and n-type graphene charge carriers, we observe that the Coulomb drag unexpectedly changes direction when the temperature is lowered. We find this phenomenon to be dominant when the Fermi wave vector in graphene is larger than in GaAs. At temperatures above $\approx 70\,{\rm{K}}$, the drag signal is consistent with momentum exchange. In all discussed regimes, the Onsager relation is respected.
en_US
dc.format
application/pdf
dc.language.iso
en
en_US
dc.publisher
Institute of Physics
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/3.0/
dc.subject
Coulomb drag
en_US
dc.subject
graphene
en_US
dc.subject
GaAs
en_US
dc.subject
Electron gas
en_US
dc.title
Anomalous Coulomb drag between bilayer graphene and a GaAs electron gas
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 3.0 Unported
dc.date.published
2017-10-31
ethz.journal.title
New Journal of Physics
ethz.journal.volume
19
en_US
ethz.journal.issue
10
en_US
ethz.journal.abbreviated
New J. Phys.
ethz.pages.start
103042
en_US
ethz.size
8 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
London
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03439 - Ensslin, Klaus / Ensslin, Klaus
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03439 - Ensslin, Klaus / Ensslin, Klaus::08835 - Ihn, Thomas (Tit.-Prof.)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03439 - Ensslin, Klaus / Ensslin, Klaus
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
en_US
ethz.date.deposited
2017-11-22T08:45:24Z
ethz.source
SCOPUS
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2018-02-22T09:18:20Z
ethz.rosetta.lastUpdated
2022-03-28T19:15:30Z
ethz.rosetta.versionExported
true
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/211876
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/230258
ethz.COinS
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