Reduction of gate hysteresis above ambient temperature via ambipolar pulsed gate sweeps in carbon nanotube field effect transistors for sensor applications

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Author

Date

2010-10-11

Type

Journal Article

ETH Bibliography

yes

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Publication status

published

External links

Journal / series

Applied Physics Letters

Volume

97(15)

Pages / Article No.

153103

Publisher

American Institute of Physics

Organisational unit

03609 - Hierold, Christofer / Hierold, Christofer

Notes

Received 21 July 2010, Accepted 20 September 2010, Published online 11 October 2010.

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