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dc.contributor.author
Eberle, Sebastian
dc.contributor.author
Roman, Cosmin
dc.contributor.author
Hierold, Christofer
dc.date.accessioned
2018-04-04T15:42:28Z
dc.date.available
2018-03-15T04:03:15Z
dc.date.available
2018-04-04T15:42:28Z
dc.date.issued
2018-06-05
dc.identifier.issn
0167-9317
dc.identifier.issn
1873-5568
dc.identifier.other
10.1016/j.mee.2018.02.027
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/250074
dc.identifier.doi
10.3929/ethz-b-000250074
dc.description.abstract
Suspended individual carbon nanotubes show great promise in use as gas sensors, as they are not only highly sensitive and selective, but can be operated at a few μW of power consumption. This work reports on a novel architecture and process flow to reduce the voltage range needed for a full sensor characterization to the values given by modern technology. The developed fast and flexible fabrication run yields CNTFET devices with varying gate distances, improving gate coupling up to 25 times to previous own studies. Devices with long gate distances (dg = 1.84 μm) show a 3.2-times improved signal to noise ratio (voltage shift upon gas adsorption over signal variation) when compared to short gate distance devices (dg = 0.24 μm).
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Elsevier
en_US
dc.rights.uri
http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject
Carbon nanotubes
en_US
dc.subject
Gas sensors
en_US
dc.subject
Fabrication
en_US
dc.subject
Gate coupling
en_US
dc.subject
Threshold voltage shift
en_US
dc.title
Effect of varying gate distance on the threshold voltage shift in carbon nanotube field effect transistor gas sensors
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
dc.date.published
2018-02-24
ethz.journal.title
Microelectronic Engineering
ethz.journal.volume
193
en_US
ethz.journal.abbreviated
Microelectron. eng.
ethz.pages.start
86
en_US
ethz.pages.end
90
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Amsterdam
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02130 - Dep. Maschinenbau und Verfahrenstechnik / Dep. of Mechanical and Process Eng.::03609 - Hierold, Christofer / Hierold, Christofer
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02130 - Dep. Maschinenbau und Verfahrenstechnik / Dep. of Mechanical and Process Eng.::03609 - Hierold, Christofer / Hierold, Christofer
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02130 - Dep. Maschinenbau und Verfahrenstechnik / Dep. of Mechanical and Process Eng.::03609 - Hierold, Christofer / Hierold, Christofer
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02130 - Dep. Maschinenbau und Verfahrenstechnik / Dep. of Mechanical and Process Eng.::03609 - Hierold, Christofer / Hierold, Christofer
ethz.date.deposited
2018-03-15T04:03:19Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2018-04-04T15:42:35Z
ethz.rosetta.lastUpdated
2019-02-02T16:35:47Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Effect%20of%20varying%20gate%20distance%20on%20the%20threshold%20voltage%20shift%20in%20carbon%20nanotube%20field%20effect%20transistor%20gas%20sensors&rft.jtitle=Microelectronic%20Engineering&rft.date=2018-06-05&rft.volume=193&rft.spage=86&rft.epage=90&rft.issn=0167-9317&1873-5568&rft.au=Eberle,%20Sebastian&Roman,%20Cosmin&Hierold,%20Christofer&rft.genre=article&
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