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dc.contributor.author
Pisoni, Riccardo
dc.contributor.author
Lei, Zijin
dc.contributor.author
Back, Patrick
dc.contributor.author
Eich, Marius
dc.contributor.author
Overweg, Hiske
dc.contributor.author
Lee, Yongjin
dc.contributor.author
Watanabe, Kenji
dc.contributor.author
Taniguchi, Takashi
dc.contributor.author
Ihn, Thomas
dc.contributor.author
Ensslin, Klaus .
dc.date.accessioned
2018-04-05T09:50:47Z
dc.date.available
2018-04-02T03:50:26Z
dc.date.available
2018-04-05T09:50:47Z
dc.date.issued
2018
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.5021113
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/254386
dc.language.iso
en
en_US
dc.publisher
American Institute of Physics
en_US
dc.title
Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructure
en_US
dc.type
Journal Article
dc.date.published
2018-03-19
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
112
en_US
ethz.journal.issue
12
en_US
ethz.journal.abbreviated
Appl. phys. lett.
ethz.pages.start
123101
en_US
ethz.size
3 p.
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Melville, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03439 - Ensslin, Klaus / Ensslin, Klaus
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03439 - Ensslin, Klaus / Ensslin, Klaus
ethz.date.deposited
2018-04-02T03:50:34Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2018-04-05T09:50:56Z
ethz.rosetta.lastUpdated
2019-02-02T16:36:17Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Gate-tunable%20quantum%20dot%20in%20a%20high%20quality%20single%20layer%20MoS2%20van%20der%20Waals%20heterostructure&rft.jtitle=Applied%20Physics%20Letters&rft.date=2018&rft.volume=112&rft.issue=12&rft.spage=123101&rft.issn=0003-6951&1077-3118&rft.au=Pisoni,%20Riccardo&Lei,%20Zijin&Back,%20Patrick&Eich,%20Marius&Overweg,%20Hiske&rft.genre=article&
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