Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime
dc.contributor.author
Drichko, Irina L.
dc.contributor.author
Dmitriev, Alexander A.
dc.contributor.author
Malysh, Vitaly A.
dc.contributor.author
Smirnov, Ivan Y.
dc.contributor.author
Galperin, Yuri M.
dc.contributor.author
von Känel, Hans
dc.contributor.author
Kummer, Matthias
dc.contributor.author
Isella, Giovanni
dc.contributor.author
Chrastina, Daniel
dc.date.accessioned
2018-04-11T06:43:14Z
dc.date.available
2018-04-11T04:35:28Z
dc.date.available
2018-04-11T06:43:14Z
dc.date.issued
2018-02
dc.identifier.issn
1090-6509
dc.identifier.issn
1063-7761
dc.identifier.other
10.1134/S1063776118010144
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/256949
dc.language.iso
en
en_US
dc.publisher
Pleiades Publishing
en_US
dc.title
Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime
en_US
dc.type
Journal Article
ethz.journal.title
Journal of Experimental and Theoretical Physics
ethz.journal.volume
126
en_US
ethz.journal.issue
2
en_US
ethz.journal.abbreviated
J. Exp. Theor. Phys.
ethz.pages.start
246
en_US
ethz.pages.end
254
en_US
ethz.size
9 p.
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Wilmington, DL
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics
en_US
ethz.date.deposited
2018-04-11T04:35:50Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2018-04-11T06:43:17Z
ethz.rosetta.lastUpdated
2021-02-14T23:14:05Z
ethz.rosetta.versionExported
true
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Journal Article [122069]