Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with FT = 143 GHz
Metadata only
Date
2010-09Type
- Journal Article
Publication status
publishedJournal / series
Applied physics expressVolume
Pages
Publisher
The Japan Society of Applied PhysicsOrganisational unit
03721 - Bolognesi, Colombo
Notes
Received 9 July 2010, Accepted 9 August 2010, Published online 3 September 2010.More
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