Impact Ionization and Bell-Shaped Gate Leakage at Room Temperature and 10 K in GaInAs/AlInAs pHEMTs on InP Substrates

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Autor(in)
Alt, Andreas R.
Bolognesi, Colombo R.
Datum
2010
Typ
    Other Conference Item
Publikationsstatus
published
Verlag
Technische Universität Darmstadt
Konferenz
34th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt/Seeheim, Germany, May 17-19, 2010
Organisationseinheit
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
Anmerkungen
Conference lecture on 19 May 2010.
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