Impact Ionization and Bell-Shaped Gate Leakage at Room Temperature and 10 K in GaInAs/AlInAs pHEMTs on InP Substrates

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Author
Alt, Andreas R.
Bolognesi, Colombo R.
Date
2010
Type
    Other Conference Item
Publication status
published
Publisher
Technische Universität Darmstadt
Event
34th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt/Seeheim, Germany, May 17-19, 2010
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
Notes
Conference lecture on 19 May 2010.
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